Double step buried oxide (DSBO) SOI-MOSFET: A proposed structure for improving self-heating effectsOROUJI, Ali A; HEYDARI, Sara; FATHIPOUR, Morteza et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 9, pp 1665-1668, issn 1386-9477, 4 p.Article

SB-MOSFETs in UTB-SOI Featuring PtSi Source/Drain With Dopant SegregationZHEN ZHANG; ZHIJUN QIU; HELLSTRÖM, Per-Erik et al.IEEE electron device letters. 2008, Vol 29, Num 1, pp 125-127, issn 0741-3106, 3 p.Article

Experimental study on superior mobility in (110)-oriented UTB SOI pMOSFETsTSUTSUI, Gen; SAITOH, Masumi; HIRAMOTO, Toshiro et al.IEEE electron device letters. 2005, Vol 26, Num 11, pp 836-838, issn 0741-3106, 3 p.Article

Impact of SOI thickness fluctuation on threshold voltage variation in ultra-thin body SOI MOSFETsTSUTSUI, Gen; SAITOH, Masumi; NAGUMO, Toshiharu et al.IEEE transactions on nanotechnology. 2005, Vol 4, Num 3, pp 369-373, issn 1536-125X, 5 p.Conference Paper

Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operationSAMSUDIN, K; CHENG, B; BROWN, A. R et al.Solid-state electronics. 2006, Vol 50, Num 1, pp 86-93, issn 0038-1101, 8 p.Conference Paper

A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and heliumDAKE WU; RU HUANG; WEIHAI BU et al.Microelectronic engineering. 2008, Vol 85, Num 7, pp 1490-1494, issn 0167-9317, 5 p.Article

Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III―V Semiconductor) on Variation for Logic and SRAM ApplicationsAGRAWAL, Nidhi; KIMURA, Yoshie; ARGHAVANI, Reza et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3298-3304, issn 0018-9383, 7 p.Article

Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopantsSAMSUDIN, K; CHENG, B; BROWN, A. R et al.Solid-state electronics. 2006, Vol 50, Num 4, pp 660-667, issn 0038-1101, 8 p.Conference Paper

Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETsMOLDOVAN, Oana; CHAVES, Ferney A; JIMENEZ, David et al.Solid-state electronics. 2008, Vol 52, Num 12, pp 1867-1871, issn 0038-1101, 5 p.Conference Paper

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operationLIME, F; RITZENTHALER, R; RICOMA, M et al.Solid-state electronics. 2011, Vol 57, Num 1, pp 61-66, issn 0038-1101, 6 p.Article

Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 1 analytical consideration and strain-induced valley splittingWINDBACHER, Thomas; SVERDLOV, Viktor; BAUMGARTNER, Oskar et al.Solid-state electronics. 2010, Vol 54, Num 2, pp 137-142, issn 0038-1101, 6 p.Article

Theoretical foundations of the quantum drift-diffusion and density-gradient models : Ultimate integration on silicon conference 2007BACCARANI, Giorgio; GNANI, Elena; GNUDI, Antonio et al.Solid-state electronics. 2008, Vol 52, Num 4, pp 526-532, issn 0038-1101, 7 p.Article